Study of the effect of properties of material on vacuum breakdown initiated by laser radiation

In this work, the effect of various properties of materials on vacuum breakdown initiated by laser radiation is considered. Estimating calculations are performed which show that the material of the target electrode distinctly affects the minimum energy of laser radiation needed for igniting a vacuum spark. The experimental studies carried out confirm the estimating calculations, and a number of materials are revealed which can be arranged in order of increase in the energy needed for the formation of breakdown in vacuum by the impact of a laser pulse.     

Force Chain Characteristics and Effects of a Dense Granular Flow System in a Third Body Interface During the Shear Dilatancy Process

In order to investigate the characteristics of force chains in a granular flow system, a parallel plate shear cell is constructed to simulate the shear movement of an infinite parallel plate and observe variations in relevant parameters. The shear dilatancy process is divided into three stages, namely, plastic strain, macroscopic failure, and granular recombination. The stickslip phenomenon is highly connected with the evolution of force chains during the shear dilatancy process. The load–distribution rate curves and patterns of the force chains are utilized to describe the load-carrying behaviors and morphologic changes of force chains separately. Force chains, namely, “diagonal gridding,” “tadpole-shaped,” and “pinnate” are defined according to the form of the force chains in the corresponding three stages.     

Improved magnetosensor for the detection of hydrogen peroxide and glucose

Journal of Solid State Electrochemistry - In this work, the use of neodymium electrodes as a basis for the immobilization of magnetite nanoparticles has been carried out. The sensitivity and...     

Molecular dynamics study of cluster structure and rotational wave properties in solid-state nanostructures

Molecular dynamics simulation was performed to study the formation of cluster structure, interfaces, and surfaces with different curvature radii in a perfect nanocrystal passed through by a nonlinear wave. It is shown that this process is a type of nanostructure self-organization in response to an external energy flux with subsequent development of a strong rotational field.     

Differential Graded Bocses and A ∞ $A_{\infty }$ -Modules

Algebras and Representation Theory - We introduce and study the category of twisted modules over a triangular differential graded bocs. We show that in this category idempotents split, that it...     

Step cost functions in a fleet size and mix vehicle routing problem with time windows

Annals of Operations Research - The vehicle routing problem is a traditional combinatorial problem with practical relevance for a wide range of industries. In the literature, several specificities...     

On Anomalous Dissipation in the Plasma of the Dusty Lunar Exosphere

JETP Letters - One of the main features of the dusty plasma compared to the conventional plasma (without charged dust particles is anomalous dissipation that is caused by the charging of dust...     

Function of the Non-Crystalline X-Ray Amorphous Phase of Highly Dispersed Powder of CaO in Adsorption of CO2 and H2O

Russian Journal of General Chemistry - Highly dispersed CaO has been synthesized by heating an aqueous solution of calcium nitrate and D-glucose up to 800°C. Calcium oxide is formed with an...     

Effect of Mechanical Activation on the Reactivity of Reagents in the Preparation of Lithium Ferrites

Russian Physics Journal -     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.